Photoelectromagnetic effects on electron and proton irradiated CuInSe2 thin films

Photoelectromagnetic effects in CuInSe2 (CIS) thin films irradiated with 3 MeV electrons or 380 keV protons have been investigated to evaluate the diffusion length. CIS thin films were deposited by radio frequency sputtering. The diffusion length was decreased due to irradiation-induced defects, as the electron fluence exceeded 1x10(16) cm(-2). The damage constant was estimated from the change in diffusion length before and after irradiation, and was about 4x10(-9). After proton irradiation, the diffusion length decreased significantly as the proton fluence exceeded 1x10(13) cm(-2). The damage constant in this case was estimated to be about 1x10(-4)-4x10(-5). (C) 2003 American Institute of Physics.