Deep level transient spectroscopy study of electron-irradiated CuInSe2 thin films

被引：0
|
作者：
Hiroshi Okada
Naoki Fujita
Hae-Seok Lee
Akihiro Wakahara
Akira Yoshida
Takeshi Ohshima
Hisayoshi Itoh
机构：
[1] Toyohashi University of Technology,Department of Electrical and Electronic Engineering
[2] Japan Atomic Energy Research Institute,undefined
来源：
Journal of Electronic Materials | 2003年 / 32卷
关键词：
CuInSe; electron irradiation; deep level transient spectroscopy (DLTS); Hall-effect measurement;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Irradiation of high-energy (2-MeV and 3-MeV) electrons on single-crystalline n-CuInSe2 films has been investigated. From Hall-effect measurements of the film, the carrier density and mobility were decreased by increasing the electron fluence above 1×1017 cm−2. In both as-grown and electron-irradiated CuInSe2 films, the deep level transient spectroscopy (DLTS) peak, indicating electron trap, was found at around 180 K. However, Arrhenius plots of the observed DLTS peaks in as-grown and electron-irradiated films showed different behavior, suggesting the presence of electron traps introduced by high-energy electron irradiation.
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页码：L5 / L8
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