Consistent Model of NBTI with Low Drain Voltage in P-MOSFETs

被引：0

作者：

Gao, Shucheng ^{[1
]}

Ma, Chenyue ^{[1
]}

Lin, Xinnan ^{[1
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen, Peoples R China

来源：

2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2016年

基金：

中国博士后科学基金;

关键词：

NBTI; drain voltage; model; BIAS TEMPERATURE-INSTABILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A consistent model for the negative bias temperature instability (NBTI) is proposed to describe the influence of applied drain voltage. It is observed that threshold voltage shift induced by NBTI is obviously constrained by the applied drain voltage. With rise of drain voltage, the electrical field within the gate oxide (E-ox) decreases and results in the reduction of interface state generation and oxide hole-trapping. Therefore, the device degradation caused by NBTI will be weakened. The threshold voltage shift extracted from current characteristics is demonstrated as an integration effect of the trap distribution along the channel. The drain bias dependence of E-ox is obtained and implemented into the physical based NBTI model. The modeling result shows a good agreement with the measured data.

引用

页码：230 / 233

页数：4

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