Effect of ion beam implantation on density of DLC prepared by plasma-based ion implantation and deposition

被引：8
|
作者：
Oka, Y [1 ]
Kirinuki, A
Suzuki, T
Yatsuzuka, A
Yatsui, K
机构：
[1] Univ Hyogo, Grad Sch Engn, Himeji, Hyogo, Japan
[2] Nagaoka Univ Technol, Extreme Energy Dens Res Inst, Nagaoka, Niigata, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期
关键词：
diamond-like carbon; plasma-based ion implantation and deposition; residual stress; density; hydrogen content; hardness;
D O I：
10.1016/j.nimb.2005.08.203
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
DLC (diamond-like carbon) films were prepared by the hybrid process of plasma-based ion implantation and deposition using acetylene plasma. The hydrogen content in DLC films decreased with the increase of negative pulsed voltage. The residual stress, density and hardness of DLC films had a peak at the negative pulsed voltage of 0 to -5 kV. At -5 to -20 kV, they had a correlation each other and considerably decreased with the increase of negative pulsed voltage. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码：335 / 337
页数：3
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