Titanium implantation profiles in silicon using metal plasma-based ion implantation technique

被引：1
|
作者：
Koto, M
Ohno, K
Yoshikado, S
Yukimura, K
Kurooka, S
Suzuki, Y
Kinomura, A
Chayahara, A
Horino, Y
机构：
[1] Doshisha Univ, Kyoto 6100321, Japan
[2] Ion Engn Res Inst Corp, Hirakata, Osaka 5730128, Japan
[3] Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 54卷 / 1-3期
关键词：
plasma-based ion implantation; metal plasma; pulse voltage; silicide;
D O I：
10.1016/S0254-0584(98)00021-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have carried out preliminary studies of a plasma-based ion implantation technique which utilizes a vacuum are produced metal plasma. Depth profiles of titanium implanted into silicon have been analysed by XPS and RES. Titanium concentration in the silicon substrate increased proportionally to the repetition frequency. As the applied pulse voltage increased, the depth of titanium implantation increased. The titanium was found to a depth of up to 1.0x10(18) atoms cm(-2) in the silicon substrate, and the dose was estimated to be about 10(16)similar to 10(17) cm(-2). A mixed layer of titanium and silicon was produced. RES analysis indicated a possibility for titanium and silicon in the mixed layer to form a silicide structure upon heating of the substrate. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：127 / 130
页数：4
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