Plasma-based ion implantation sterilization technique and ion energy estimation

被引：5
|
作者：
Tanaka, T
Watanabe, S
Shibahara, K
Yokoyama, S
Takagi, T
机构：
[1] Hiroshima Inst Technol, Saiki Ku, Hiroshima 7315193, Japan
[2] Soken Ind Co Ltd, Kawagoe, Saitama 3500833, Japan
[3] Hiroshima Univ, Higashihiroshima 7398527, Japan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 04期
关键词：
D O I：
10.1116/1.1943468
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Plasma-based ion implantation (PBII) is applied as a sterilization technique for three-dimensional work pieces. In the sterilization process, a pulsed negative high voltage (5 mu s pulse width, 300 pulses/s,-800 V to -13 kV) is applied to the electrode (workpiece) under N-2 at a gas pressure of 2.4 Pa. The resultant self-ignited plasma is shown to successfully reduce the number of active Bacillus pumilus cells by 105 times after 5 min of processing. The nitrogen ion energy is estimated using a simple method based on secondary ion mass spectroscopy analysis of the vertical distribution of nitrogen in PBII-treated Si. (c) 2005 American Vacuum Society.
引用
收藏
页码：1018 / 1021
页数：4
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