Comparison of defects created by plasma-based ion implantation and conventional implantation of hydrogen in germanium

被引：1

作者：

David, M. L. ^{[1
]}

Pailloux, F. ^{[1
]}

Drouet, M. ^{[1
]}

Beaufort, M. F. ^{[1
]}

Barbot, J. F. ^{[1
]}

Simoen, E. ^{[2
]}

Claeys, C. ^{[2
,3
]}

机构：

[1] Univ Poitiers, Met Phys Lab, UMR 6630, BP 30179, F-86962 Futuroscope, France

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, EE Dept, B-3001 Leuven, Belgium

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷

关键词：

germanium; platelets; plasma based ion implantation; hydrogen;

D O I：

10.4028/www.scientific.net/SSP.131-133.101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(001) n-type Ge has been implanted at given fluence and intermediate temperature with hydrogen ions using two processes: conventional in-line implantation and plasma based ion implantation. The as-created microstructure has been compared using transmission electron microscopy. In particular, it has been shown that the major differences observed are due to the implantation temperature, much higher during the PBII process. This suggests that plasma based ion implantation could be used for layer transfer in spite of a higher surface roughness observed after the PBII process.

引用

页码：101 / +

页数：3

共 50 条

[1] Plasma-based ion implantation
Möller, W
Mukherjee, S
[J]. CURRENT SCIENCE, 2002, 83 (03): : 237 - 253
[2] Comparison of surface layers on copper, titanium and tantalum created by methane plasma-based ion implantation
Kraft, G.
Flege, S.
Baba, K.
Hatada, R.
Ensinger, W.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (04): : 985 - 988
[3] Multi-dipolar plasmas for plasma-based ion implantation and plasma-based ion implantation and deposition
Béchu, S
Maulat, O
Arnal, Y
Vempaire, D
Lacoste, A
Pelletier, J
[J]. SURFACE & COATINGS TECHNOLOGY, 2004, 186 (1-2): : 170 - 176
[4] The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium
David, M. L.
Pailloux, F.
Babonneau, D.
Drouet, M.
Barbot, J. F.
Simoen, E.
Claeys, C.
[J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)
[5] A COMPARISON OF PLASMA IMMERSION ION-IMPLANTATION WITH CONVENTIONAL ION-IMPLANTATION
KENNY, MJ
WIELUNSKI, LS
TENDYS, J
COLLINS, GA
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 262 - 266
[6] DEFECTS CREATED BY HYDROGEN IMPLANTATION INTO SILICON
HARTUNG, J
WEBER, J
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 47 - 50
[7] Plasma-based ion implantation utilising a cathodic arc plasma
Bilek, MMM
McKenzie, DR
Tarrant, RN
Lim, SHM
McCulloch, DG
[J]. SURFACE & COATINGS TECHNOLOGY, 2002, 156 (1-3): : 136 - 142
[8] Simulation of plasma-based ion implantation of a sawtooth target
Sheridan, TE
[J]. SURFACE & COATINGS TECHNOLOGY, 1997, 93 (2-3): : 225 - 228
[9] Reduction of pinhole defects in DLC film prepared with plasma-based ion implantation and deposition
Nishino, Wataru
Uchida, Hitoshi
Yatsuzuka, Mitsuyasu
[J]. TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 32, NO 4, 2007, 32 (04): : 887 - 890
[10] Effect of ion beam implantation on density of DLC prepared by plasma-based ion implantation and deposition
Oka, Y
Kirinuki, A
Suzuki, T
Yatsuzuka, A
Yatsui, K
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 242 (1-2): : 335 - 337

← 1 2 3 4 5 →