V-band low phase noise QVCO in 90nm CMOS technology using a gate-connected tank

被引:3
|
作者
Banin, R. [1 ,2 ]
Degani, O. [1 ,2 ]
Socher, E. [1 ]
机构
[1] Tel Aviv Univ, Sch Elect Engn, IL-69978 Tel Aviv, Israel
[2] Intel Design Ctr, Haifa, Israel
关键词
OSCILLATORS;
D O I
10.1049/el.2012.1696
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A quadrature voltage controlled oscillator (QVCO) with -111 dBc/Hz average phase noise at 1MHz offset across an output frequency range of 48.9-50.3 GHz is presented. The design employs a modification of the Armstrong technique of using a transformer in the LC tank to improve the phase noise by reducing the single-ended component of the tank capacitance in a differential cross-coupled design and by separating the gate and drain transistor bias. Tuning is achieved by an accumulation MOS varactor and a thermometer-coded bank of 14 switched capacitors. The design consumes 23 mA from a 1.3 V supply and occupies an area of 0.25 mm(2) in 90 nm CMOS technology.
引用
收藏
页码:1046 / 1047
页数:2
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