Electrical properties of CuGaTe2 thin films

被引:3
|
作者
Reddy, MS
Reddy, KTR
Naidu, BS
Reddy, PJ
机构
[1] Department of Physics, Sri Venkateswara University
关键词
flash evaporation; polycrystallinity; thermoelectric power;
D O I
10.1016/0254-0584(96)80070-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CuGaTe2 thin films were prepared by the flash evaporation technique. The influence of substrate temperature (T-s) on the electrical characteristics was studied. The films formed at T-s = 523-573 K were polycrystalline, single phase and nearly stoichiometric. The films of 0.7 mu m thickness showed an electrical resistivity of about 10(-2) Omega cm, a mobility of 55 cm(2) V-1 s(-1) with a carrier concentration of 1.5 x 10(19) cm(-3). The electrical resistivity was found to decrease with film thickness, whereas the mobility increased. The activation energies were also determined in the temperature range 300-575 K.
引用
收藏
页码:281 / 283
页数:3
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