Electrical properties of CuGaTe2 thin films

CuGaTe2 thin films were prepared by the flash evaporation technique. The influence of substrate temperature (T-s) on the electrical characteristics was studied. The films formed at T-s = 523-573 K were polycrystalline, single phase and nearly stoichiometric. The films of 0.7 mu m thickness showed an electrical resistivity of about 10(-2) Omega cm, a mobility of 55 cm(2) V-1 s(-1) with a carrier concentration of 1.5 x 10(19) cm(-3). The electrical resistivity was found to decrease with film thickness, whereas the mobility increased. The activation energies were also determined in the temperature range 300-575 K.