Electrical properties of CuGaTe2 thin films

被引：3
|
作者：
Reddy, MS
Reddy, KTR
Naidu, BS
Reddy, PJ
机构：
[1] Department of Physics, Sri Venkateswara University
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1996年 / 44卷 / 03期
关键词：
flash evaporation; polycrystallinity; thermoelectric power;
D O I：
10.1016/0254-0584(96)80070-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CuGaTe2 thin films were prepared by the flash evaporation technique. The influence of substrate temperature (T-s) on the electrical characteristics was studied. The films formed at T-s = 523-573 K were polycrystalline, single phase and nearly stoichiometric. The films of 0.7 mu m thickness showed an electrical resistivity of about 10(-2) Omega cm, a mobility of 55 cm(2) V-1 s(-1) with a carrier concentration of 1.5 x 10(19) cm(-3). The electrical resistivity was found to decrease with film thickness, whereas the mobility increased. The activation energies were also determined in the temperature range 300-575 K.
引用
收藏
页码：281 / 283
页数：3
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