All evaporation submicron lift-off lithography process with negative e-beam QSR-5 resist

被引：6
|
作者：
Gerbedoen, Jean-Claude [1 ]
Aliane, Abdelkader [1 ]
Giguere, Alexandre [1 ]
Drouin, Dominique [1 ]
Ares, Richard [1 ]
Aimez, Vincent [1 ]
机构：
[1] Univ Sherbrooke, Dept Elect & Comp Engn, Sherbrooke, PQ J1K 2R1, Canada
来源：
MICROELECTRONIC ENGINEERING | 2013年 / 103卷
基金：
加拿大自然科学与工程研究理事会;
关键词：
Bilayer lift-off process; Evaporated resist; ebeam lithography; Photodetector; PHOTORESIST;
D O I：
10.1016/j.mee.2012.10.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a bilayer lift-off process without spin coating step, based on evaporated negative ebeam resist QSR-5. This technique is appropriated to process small samples of a few millimetres in size. Evaporated amorphous silicon was used to create the undercut. Patterns were defined by electron beam lithography thanks to the high resolution QSR-5 resist. We optimized the undercut of the a-Si layer using a high density plasma etching system with different recipes to allow submicron lines lift-off. Lift-off with no edge bead effect was performed using this technique. Finally, the process was applied to demonstrate the fabrication of Metal/Semiconductor/Metal (MSM) photodetector on a millimetre scale substrate. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
引用
收藏
页码：123 / 125
页数：3
相关论文
共 32 条
  • [1] A ZEP520-LOR Bilayer Resist Lift-off Process by E-Beam Lithography for Nanometer Pattern Transfer
    Tu, Deyu
    Liu, Ming
    Shang, Liwei
    Xie, Changqing
    Zhu, Xiaoli
    2007 7TH IEEE CONFERENCE ON NANOTECHNOLOGY, VOL 1-3, 2007, : 628 - 631
  • [2] Fabrication of Metallic Nanostructures of Sub-20 nm with an Optimized Process of E-Beam Lithography and Lift-Off
    Yue, Weisheng
    Wang, Zhihong
    Wang, Xianbin
    Chen, Longqing
    Yang, Yang
    Chew, Basil
    Syed, Ahad
    Wong, Kim Chong
    Zhang, Xixiang
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (01) : 696 - 699
  • [3] Analysis of e-beam impact on the resist stack in e-beam lithography process
    Indykiewicz, K.
    Paszkiewicz, B.
    ELECTRON TECHNOLOGY CONFERENCE 2013, 2013, 8902
  • [4] Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method
    Sun, KW
    Huang, SC
    Kechiantz, A
    Lee, CP
    OPTICAL AND QUANTUM ELECTRONICS, 2005, 37 (04) : 425 - 432
  • [5] Subwavelength gratings fabricated on semiconductor substrates via E-beam lithography and lift-off method
    Kien Wen Sun
    Shih-Chieh Huang
    Ara Kechiantz
    Chien-Ping Lee
    Optical and Quantum Electronics, 2005, 37 : 425 - 432
  • [6] LIFT-OFF TECHNIQUE USING DIFFERENT E-BEAM WRITERS
    Chlumska, Jana
    Kolarik, Vladimir
    Kratky, Stanislav
    Matejka, Milan
    Urbanek, Michal
    Horacek, Miroslav
    NANOCON 2013, 5TH INTERNATIONAL CONFERENCE, 2014, : 286 - 290
  • [7] SWELLING OF NEGATIVE RESIST SYSTEMS USED IN E-BEAM LITHOGRAPHY
    NAMASTE, YMN
    MALHOTRA, S
    DEMS, BC
    RODRIGUEZ, F
    OBENDORF, SK
    CHEMICAL ENGINEERING COMMUNICATIONS, 1990, 98 : 47 - 54
  • [8] Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process
    Yang, Haifang
    Jin, Aizi
    Luo, Qiang
    Li, Junjie
    Gu, Changzhi
    Cui, Zheng
    MICROELECTRONIC ENGINEERING, 2008, 85 (5-6) : 814 - 817
  • [9] METAL LIFT-OFF USING A TRILEVEL RESIST SYSTEM FOR ELECTRON BEAM LITHOGRAPHY.
    Etrillard, J.
    Bellessa, J.
    Izrael, A.
    Microelectronic Engineering, 1987, 7 (01) : 11 - 20
  • [10] Optimization of e-beam lithography parameters for nanofabrication of sub-50 nm gold nanowires and nanogaps based on a bilayer lift-off process
    Sahin, Osman
    Albayrak, Oguz Mustafa
    Yapici, Murat Kaya
    NANOTECHNOLOGY, 2024, 35 (39)
1234