Analysis of e-beam impact on the resist stack in e-beam lithography process

被引：0

作者：

Indykiewicz, K. ^{[1
]}

Paszkiewicz, B. ^{[1
]}

机构：

[1] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland

来源：

ELECTRON TECHNOLOGY CONFERENCE 2013 | 2013年 / 8902卷

关键词：

e-beam lithography; lift-off process; bilayer resist system;

D O I：

10.1117/12.2031703

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Paper presents research on the sub-micron gate, AlGaN/GaN HEMT type transistors, fabrication by e-beam lithography and lift-off technique. The impact of the electron beam on the resists layer and the substrate was analyzed by MC method in Casino v3.2 software. The influence of technological process parameters on the metal structures resolution and quality for paths 100 nm, 300 nm and 500 nm wide and 20 mu m long was studied. Qualitative simulation correspondences to the conducted experiments were obtained.

引用

页数：9

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