All evaporation submicron lift-off lithography process with negative e-beam QSR-5 resist

被引：6

作者：

Gerbedoen, Jean-Claude ^{[1
]}

Aliane, Abdelkader ^{[1
]}

Giguere, Alexandre ^{[1
]}

Drouin, Dominique ^{[1
]}

Ares, Richard ^{[1
]}

Aimez, Vincent ^{[1
]}

机构：

[1] Univ Sherbrooke, Dept Elect & Comp Engn, Sherbrooke, PQ J1K 2R1, Canada

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 103卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

Bilayer lift-off process; Evaporated resist; ebeam lithography; Photodetector; PHOTORESIST;

D O I：

10.1016/j.mee.2012.10.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a bilayer lift-off process without spin coating step, based on evaporated negative ebeam resist QSR-5. This technique is appropriated to process small samples of a few millimetres in size. Evaporated amorphous silicon was used to create the undercut. Patterns were defined by electron beam lithography thanks to the high resolution QSR-5 resist. We optimized the undercut of the a-Si layer using a high density plasma etching system with different recipes to allow submicron lines lift-off. Lift-off with no edge bead effect was performed using this technique. Finally, the process was applied to demonstrate the fabrication of Metal/Semiconductor/Metal (MSM) photodetector on a millimetre scale substrate. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.

引用

页码：123 / 125

页数：3

共 32 条

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