A novel SEU tolerant SRAM data cell design

被引：4

作者：

Zhang, Guohe ^{[1
]}

Zeng, Yunlin ^{[1
]}

Liang, Feng ^{[1
]}

Chen, Kebin ^{[2
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Elect & Informat, Xian 710049, Shaanxi, Peoples R China

[2] Xian Commun Inst, Informat Serv Dept, Xian 710106, Shaanxi, Peoples R China

来源：

IEICE ELECTRONICS EXPRESS | 2015年 / 12卷 / 17期

基金：

中国国家自然科学基金;

关键词：

single event upset; radiation-hardened SRAM;

D O I：

10.1587/elex.12.20150504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved SEU tolerant SRAM data cell design is presented here. The cell enhances the capability of SEU tolerance by creating spatial redundancy of data and virtue of latch design. The results show that our proposed design achieves high resilience to SEU and provides a 300 times increase in critical charge compared to standard 6T cell without much degradation in speed and Power dissipation. It shows that our design is very suitable for applying in high-reliability circuit and system design.

引用

页数：6

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