Negative Capacitance as a Performance Booster for Tunnel FET

被引：0
|
作者：
Kobayashi, Masaharu [1 ]
Jang, Kyungmin [1 ]
Ueyama, Nozomu [1 ]
Hiramoto, Toshiro [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Tokyo 1138654, Japan
来源：
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated a super steep subthreshold slope tunnel FET by introducing negative capacitance of a ferroelectric HfO2 gate insulator, for the first time. The simulation study revealed that the electric field at the tunnel junction of the tunnel FET can be effectively enhanced by potential amplification due to the negative capacitance. The enhanced electric field increases the band-to-band tunneling rate and I-on/I-orr ratio, which results in 10x higher energy efficiency than in tunnel FET.
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页码：150 / 151
页数：2
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