The Floating-Gate Non-Volatile Semiconductor Memory-From Invention to the Digital Age

被引:11
|
作者
Sze, S. M. [1 ]
机构
[1] Natl Chiao Tung Univ, Hsinchu 300, Taiwan
关键词
Semiconductor Memory; STORAGE; FLASH;
D O I
10.1166/jnn.2012.6648
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.
引用
收藏
页码:7587 / 7596
页数:10
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