A reliability methodology for Low Temperature Data Retention in floating gate non-volatile memories

被引：0

作者：

Kuhn, PJ ^{[1
]}

Hoefler, A ^{[1
]}

Harp, T ^{[1
]}

Hornung, B ^{[1
]}

Paulsen, R ^{[1
]}

Burnett, D ^{[1
]}

Higman, JM ^{[1
]}

机构：

[1] Motorola Inc, Semicond Prod Sector, Austin, TX 78735 USA

来源：

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A reliability assessment methodology consisting of a statistical model and experiments to evaluate the leakage mechanism responsible for Low Temperature Data Retention (LTDR) in floating gate non-volatile memories is presented. The nature of the leakage mechanism and the methodology necessary to observe and accurately assess this phenomenon are described.

引用

页码：266 / 270

页数：5

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