Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

被引：9
|
作者：
Rubio, JE
Marques, LA
Pelaz, L
Jaraiz, M
Barbolla, J
机构：
[1] Dept. de E. y Electrónica, Facultad de Ciencias, Universidad de Valladolid
[2] Lawrence Livermore Natl. Laboratory, Livermore
[3] AT and T Bell Labs., Murray Hill
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 112卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(95)01140-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The fluence dependence of the Si sputtering by 1 keV Ar+ has been studied by molecular dynamics simulations. To this purpose, previously amorphized samples with different initial argon concentration have been ion bombarded and the sputtered atoms have been analyzed. The calculated sputtering yield increases with the argon content according to the experimental results. The mechanisms involved in this sputtering enhancement are discussed.
引用
收藏
页码：156 / 159
页数：4
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