Molecular dynamics study of the fluence dependence of Si sputtering by 1 keV Ar+ ions

被引：9
|
作者：
Rubio, JE
Marques, LA
Pelaz, L
Jaraiz, M
Barbolla, J
机构：
[1] Dept. de E. y Electrónica, Facultad de Ciencias, Universidad de Valladolid
[2] Lawrence Livermore Natl. Laboratory, Livermore
[3] AT and T Bell Labs., Murray Hill
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 112卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(95)01140-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The fluence dependence of the Si sputtering by 1 keV Ar+ has been studied by molecular dynamics simulations. To this purpose, previously amorphized samples with different initial argon concentration have been ion bombarded and the sputtered atoms have been analyzed. The calculated sputtering yield increases with the argon content according to the experimental results. The mechanisms involved in this sputtering enhancement are discussed.
引用
收藏
页码：156 / 159
页数：4
相关论文
共 50 条
  • [21] SPUTTERING OF CARBONIZED MATERIALS BY 1 KEV AR-IONS
    PASCH, E
    BOGEN, P
    MERTENS, P
    JOURNAL OF NUCLEAR MATERIALS, 1990, 176 : 455 - 460
  • [22] Sputtering and surface state evolution of Bi under oblique incidence of 120 keV Ar+ ions
    Mammeri, S.
    Ouichaoui, S.
    Ammi, H.
    Hammoudi, H.
    Pineda-Vargas, C. A.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 269 (09): : 909 - 914
  • [23] Sputtering of thin carbon foils by 20 keV and 40 keV Ar+ bombardment
    Funsten, HO
    Shappirio, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 905 - 909
  • [24] Sputtering of thin carbon foils by 20 keV and 40 keV Ar+ bombardment
    Funsten, H.O.
    Shappirio, M.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1997, 127-128 : 905 - 909
  • [25] Sputtering of ice films by the bombardment of Ar+ ions
    Kutliev, U. O.
    COMPUTATIONAL MATERIALS SCIENCE, 2008, 43 (04) : 700 - 703
  • [26] Synthesis and Modification of Ti2SnC Nanolaminates with High-Fluence 35 keV Ar+ Ions
    Horak, P.
    Bakardjieva, S.
    Vacik, J.
    Klie, R.
    Lavrentiev, V
    Nemecek, J.
    Plocek, J.
    Kupcik, J.
    Cannavo, A.
    Ceccio, G.
    25TH INTERNATIONAL CONFERENCE ON THE APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY (CAARI 2018), 2019, 2160
  • [27] Comparative study of silicon and germanium sputtering by 1-20 keV Ar ions
    Shulga, V. I.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 254 (02): : 200 - 204
  • [28] Molecular dynamics simulations of Ar+ bombardment of Si with comparison to experiment
    Humbird, David
    Graves, David B.
    Stevens, A. A. E.
    Kessels, W. M. M.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (06): : 1529 - 1533
  • [29] SPUTTERING EXPERIMENTS WITH 1- TO 5-KEV AR+ IONS .2. MONOCRYSTALLINE TARGETS OF AL CU AND AU
    ROBINSON, MT
    SOUTHERN, AL
    JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2969 - &
  • [30] SPUTTERING OF SI WITH KEV AR+ IONS .2. COMPUTER-SIMULATION OF SPUTTER BROADENING DUE TO ION-BOMBARDMENT IN DEPTH PROFILING
    KANG, ST
    SHIMIZU, R
    OKUTANI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) : 1987 - 1994
12345