ZnO plasmonics for telecommunications

被引：40
|
作者：
Look, D. C. [1 ,2 ,3 ]
Leedy, K. D. [3 ]
机构：
[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA
[2] Wyle Labs Inc, Dayton, OH 45431 USA
[3] USAF, Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 18期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.4804984
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Plasmonic resonances (kres's) at the telecommunication wavelengths of 1.3 and 1.55 mu m can be accurately produced in ZnO layers grown at 200 degrees C by pulsed laser deposition in pure Ar ambient using a ZnO target with 3 wt. % Ga2O3, and then annealed in air to produce Hall-effect-determined carrier concentrations 8.8 and 6.0 x 10(20) cm(-3), respectively. Appropriate values of concentration and Hall mobility for a desired lambda(res) can be conveniently determined from a "plasmonic resonance phase diagram," generated from the Drude equation and mobility theory. Values of lambda(res) as low as 1 mu m can be attained in ZnO. (C) 2013 AIP Publishing LLC.
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页数：4
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