Plasmonics effect of Ag nanoislands covered n-Al:ZnO/p-Si heterostructure

被引:19
|
作者
Venugopal, N. [1 ]
Kaur, Gurpreet [1 ]
Mitra, Anirban [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Roorkee 247667, Uttar Pradesh, India
关键词
Localized surface plasmons; Silver nanoparticles; Heterostructures; Plasmonic-enhanced nanoparticles; ZNO THIN-FILM; OPTICAL-PROPERTIES; HETEROJUNCTION; NANOPARTICLES; ENHANCEMENT; EMISSION; SILICON; PHOTOLUMINESCENCE; RESONANCE; AU;
D O I
10.1016/j.apsusc.2014.09.059
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A plasmonic heterostructure of Ag (nanoisland)/n-Al:ZnO/p-Si is fabricated using pulsed laser deposition and thermal evaporation method. In this structure Al:ZnO plays an important role of transparent conductive oxide (spacer layer) as well as the rectifying junction with silicon. By introducing the silver nanoislands on Al:ZnO, light harvesting has been enhanced because of plasmonic and light scattering effect. Morphology of Ag nanoparticles in consequence with the optical and electrical properties of the device has been studied. Optical reflection measurement of the device with Ag nanoisland shows remarkable improvement in both visible and UV regions compared to the bare n-Al:ZnO/p-Si heterostructure. Near band edge emission in photoluminescence has been enhanced with the deposition of Ag nanoislands. Dark and illumination current density has also been increased with the deposition of Ag nanoisland. Our experimental results suggest that integration of Ag nanoislands may help to improve the efficiency of hybrid silicon based photonic devices. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:30 / 42
页数:13
相关论文
共 50 条
  • [1] Electrical analysis of Al/ZnO/p-Si, Al/PMMA/p-Si and Al/PMMA/ZnO/p-Si structures: Comparison study
    Ocak, S. Bilge
    Selcuk, A. B.
    Aras, G.
    Orhan, E.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 38 : 249 - 256
  • [2] Investigation of Ag/ZnO/p-Si heterostructure for diode and photodiode applications in visible spectrum
    Yildiz, Dilber Esra
    Kocyigit, Adem
    Yildirim, Murat
    PHYSICA SCRIPTA, 2024, 99 (01)
  • [3] Ultraviolet photoresponse properties of ZnO:N/p-Si and ZnO/p-Si heterojunctions
    Zahedi, F.
    Dariani, R. S.
    Rozati, S. M.
    SENSORS AND ACTUATORS A-PHYSICAL, 2013, 199 : 123 - 128
  • [4] Electrical Properties of n-ZnO:La/p-Si Heterostructure Diode
    Ilican, Saliha
    Ilgu, Gonca
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2016, 11 (04) : 401 - 406
  • [5] Electrical transport properties of ZnO/p-Si heterostructure
    Gu, Qilin
    Chen, Xudong
    Ling, Zhicong
    Mei, Yongfeng
    Fu, Jinyu
    Xiao, Jiju
    Zhu, Jianhao
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (SUPPL.): : 149 - 152
  • [6] Effect of annealing temperature on ZnO:Al/p-Si heterojunctions
    Baydogan, N.
    Karacasu, O.
    Cimenoglu, H.
    THIN SOLID FILMS, 2012, 520 (17) : 5790 - 5796
  • [7] Comparison of Al/TiO2/p-Si and Al/ZnO/p-Si photodetectors
    Yildiz, D. Esra
    Kocyigit, Adem
    Yildirim, Murat
    OPTICAL MATERIALS, 2023, 145
  • [8] Effect of Impedance Relaxation in Conductance Mechanisms in TiO2/ITO/ZnO:Al/p-Si Heterostructure
    M. Nouiri
    L. El Mir
    Journal of Electronic Materials, 2018, 47 : 3018 - 3025
  • [9] Effect of Impedance Relaxation in Conductance Mechanisms in TiO2/ITO/ZnO:Al/p-Si Heterostructure
    Nouiri, M.
    El Mir, L.
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (05) : 3018 - 3025
  • [10] Annealing induced p-type conversion and substrate dependent effect of n-ZnO/p-Si heterostructure
    Kathalingam, A.
    Kim, Hyun-Seok
    MATERIALS LETTERS, 2017, 196 : 30 - 32