High performance submicrometer pentacene-based organic thin-film transistor using planar bottom-contact structure

This paper presents a pentacene-based organic thin-film transistor (OTFT) with a submicrometer channel length of 0.5 mu m that uses a planar bottom-contact (pBC) structure to achieve high electrical performance. The performance of the submicrometer OTFT is dominantly influenced by the growth continuity of pentacene near the edge of the source/drain (S/D). The pBC structure with a bilayer dielectric can provide a continuous plane for improving the growth continuity and quality of pentacene near the edge of the S/D. This results in high electrical performance for the submicrometer OTFT with pBC structure, such as a mobility of 0.14 cm(2)/V s and an on/off current ratio of 1.9 x 10(5). (C) 2013 Elsevier B. V. All rights reserved.