High performance submicrometer pentacene-based organic thin-film transistor using planar bottom-contact structure

被引：11
|
作者：
Fan, Ching-Lin [1 ,2 ]
Lin, Yu-Zuo [2 ]
Lin, Yi-Yan [2 ]
Chen, Sui-Chih [2 ]
机构：
[1] Natl Taiwan Univ Sci & Technol, Grad Inst Electroopt Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ Sci & Technol, Dept Elect & Comp Engn, Taipei 106, Taiwan
来源：
ORGANIC ELECTRONICS | 2013年 / 14卷 / 12期
关键词：
Pentacene; Submicrometer channel length; Organic TFT; Planar bottom-contact;
D O I：
10.1016/j.orgel.2013.09.015
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper presents a pentacene-based organic thin-film transistor (OTFT) with a submicrometer channel length of 0.5 mu m that uses a planar bottom-contact (pBC) structure to achieve high electrical performance. The performance of the submicrometer OTFT is dominantly influenced by the growth continuity of pentacene near the edge of the source/drain (S/D). The pBC structure with a bilayer dielectric can provide a continuous plane for improving the growth continuity and quality of pentacene near the edge of the S/D. This results in high electrical performance for the submicrometer OTFT with pBC structure, such as a mobility of 0.14 cm(2)/V s and an on/off current ratio of 1.9 x 10(5). (C) 2013 Elsevier B. V. All rights reserved.
引用
收藏
页码：3147 / 3151
页数：5
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