Pentacene-based planar- and vertical-type organic thin-film transistor

被引：16
|
作者：
Yang, Chuan-Yi [1 ]
Cheng, Shiau-Shin
Ou, Tzu-Min
Wu, Meng-Chyi
Wu, Chun-Hung
Chao, Che-Hsi
Lin, Shih-Yen
Chan, Yi-Jen
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
[2] Natl Chung Cheng Univ, Dept Elect Engn, Chiayi 621, Taiwan
[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[4] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 07期
关键词：
organic thin-film transistor (OTFT); organic triode; pentacene; vertical organic transistor;
D O I：
10.1109/TED.2007.898672
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Pentacene-based planar- and vertical-type organic thin-film transistors (OTFTs) are investigated in this paper. High operation voltages are observed for the planar-type OTFTs with top source/drain electrodes, which results from the limitations of channel length and low material mobility. With a reduced channel length, a LiF hole-injection enhancement layer, and a thin metal gate, the vertical-type pentacene OTFTs exhibit a low-voltage operation of less than 5 V and a compatible ON/OFF ratio of larger than 10(2). The smaller current gain observed from the device under current modulation is attributed to the increase of base recombination current under the common-emitter mode.
引用
收藏
页码：1633 / 1636
页数：4
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