Bottom-Contact Pentacene Thin-Film Transistors on Silicon Nitride

被引：7

作者：

Stott, James ^{[1
,2
]}

Kumatani, Akichika ^{[3
]}

Minari, Takeo ^{[3
]}

Tsukagoshi, Kazuhito ^{[3
,4
]}

Heutz, Sandrine ^{[5
]}

Aeppli, Gabriel ^{[1
,2
]}

Nathan, Arokia ^{[1
,2
]}

机构：

[1] UCL, London Ctr Nanotechnol, Dept Elect & Elect Engn, London WC1H 0AH, England

[2] UCL, Dept Phys & Astron, London WC1H 0AH, England

[3] Natl Inst Mat Sci, WPI Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[4] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan

[5] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London Ctr Nanotechnol, London SW7 2AZ, England

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

Contact resistance; organic thin film transistors; pentacene; silicon nitride; GATE DIELECTRICS; RESISTANCE; REDUCTION;

D O I：

10.1109/LED.2011.2160520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricate high-performance pentacene thin-film transistors (TFTs) using lithographic processes compatible with industry standard amorphous silicon (a-Si) TFT fabrication. Bottom-contact bottom-gate pentacene TFTs realized with silicon nitride (SiNx) gate dielectric show effective mobility values of 0.59 cm(2)/Vs, contact resistances as low as 2.4 k Omega . cm, and low threshold voltages. These results demonstrate the viability of using SiNx as a gate dielectric for vacuum-deposited organic TFTs for large-area and flexible electronic applications.

引用

页码：1305 / 1307

页数：3

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