Two-step surface modification for bottom-contact structured pentacene thin-film transistors

被引：7
|
作者：
Wang, Sihan [1 ]
Kim, Jin-Ho [1 ]
Park, Eung-Kyu [1 ]
Oh, Jongsu [1 ]
Park, KeeChan [2 ]
Kim, Yong-Sang [1 ]
机构：
[1] Sungkyunkwan Univ, Sch Elect & Elect Engn, Gyeonggi 16419, South Korea
[2] Konkuk Univ, Dept Elect Engn, Seoul 143701, South Korea
来源：
ORGANIC ELECTRONICS | 2017年 / 43卷
关键词：
Two-step surface treatment; Bottom-contact; Organic thin-film transistor; SELF-ASSEMBLED MONOLAYER; RESISTANCE;
D O I：
10.1016/j.orgel.2016.12.040
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated surface treatment effects of hexamethyldisilazane (HMDS), poly(3,4ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and t-cysteine on gold source/drain electrodes in bottom-contact structured pentacene thin-film transistors (TFTs). The treatment methods include spin coating and immersing. We have also researched on two-step treatment based on the combination of each treatment methods. The highest device performance was achieved by treating gold S/D electrodes with 1-cysteine first and PEDOT:PSS afterwards, showing field effect mobility up to 0.35 cm(2)/V.s. t-cysteine can reduce the contact resistance between metal and semiconductor layer, and PEDOT:PSS acted as a hole transporting layer while HMDS decreased the surface energy, which enlarged the grain size of pentacene on it. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：21 / 26
页数：6
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