Electron paramagnetic resonance of the scandium acceptor in 6H silicon carbide

被引：9

作者：

Marz, M

Reinke, J

GreulichWeber, S

Spaeth, JM

Overhof, H

Mokhov, EN

Roenkov, AD

Kalabukhova, EN

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA

[2] UKRAINIAN ACAD SCI,INST SEMICOND,KIEV,UKRAINE

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 98卷 / 05期

关键词：

semiconductors; impurities in semiconductors; electron paramagnetic resonance;

D O I：

10.1016/0038-1098(95)00789-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In a Sc-doped 6H-SiC epitaxial layer on an n-type 6H-SiC substrate three new electron paramagnetic resonance (EPR) spectra were observed. They are explained as being due to the isolated Sc acceptor on the three inequivalent sites in 6H-SiC having S = 1/2. The analysis of the EPR spectra shows that Sc resides on carbon sites. The results are discussed on the basis of selfconsistent calculations for Sc-Si in silicon.

引用

页码：439 / 443

页数：5

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