Electron paramagnetic resonance of the scandium acceptor in 6H silicon carbide

被引：9
|
作者：
Marz, M
Reinke, J
GreulichWeber, S
Spaeth, JM
Overhof, H
Mokhov, EN
Roenkov, AD
Kalabukhova, EN
机构：
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA
[2] UKRAINIAN ACAD SCI,INST SEMICOND,KIEV,UKRAINE
来源：
SOLID STATE COMMUNICATIONS | 1996年 / 98卷 / 05期
关键词：
semiconductors; impurities in semiconductors; electron paramagnetic resonance;
D O I：
10.1016/0038-1098(95)00789-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In a Sc-doped 6H-SiC epitaxial layer on an n-type 6H-SiC substrate three new electron paramagnetic resonance (EPR) spectra were observed. They are explained as being due to the isolated Sc acceptor on the three inequivalent sites in 6H-SiC having S = 1/2. The analysis of the EPR spectra shows that Sc resides on carbon sites. The results are discussed on the basis of selfconsistent calculations for Sc-Si in silicon.
引用
收藏
页码：439 / 443
页数：5
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