Nonvolatile resistive switching behaviour and the mechanism in Nd:BiFeO3/Nb:SrTiO3 heterostructure

被引：18
|
作者：
Zhu, Yongdan [1 ,2 ,3 ]
Li, Meiya [1 ,2 ]
Hu, Zhongqiang [1 ,2 ]
Liu, Xiaolian [1 ,2 ]
Wang, Qiangwen [1 ,2 ]
Fang, Xiaoli [1 ,2 ]
Guo, Kaimo [1 ,2 ]
机构：
[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Minist Educ, Key Lab Artificial Micro Nano Struct, Wuhan 430072, Peoples R China
[3] Hubei Univ Nationalities, Sch Informat Engn, Enshi 445000, Hubei, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 21期
基金：
中国国家自然科学基金;
关键词：
Strontium titanates;
D O I：
10.1088/0022-3727/46/21/215305
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper reports the bipolar resistive switching (RS) effect of the Nd0.05Bi0.95FeO3/Nb:SrTiO3 heterostructure fabricated by pulsed laser deposition. This heterostructure shows a high RS ratio of over 600 at a read voltage of -0.3V after applying 5V/-8V pulse voltages. Moreover, the resistance states could be switched reversibly among multilevel resistance states by changing the magnitude of set or reset pulse voltages, which shows promise for multilevel nonvolatile memory application. The mechanism of the RS between high- and low-resistance states could be attributed to the carrier injection-trapped/detrapped process, which changes the height and thickness of the barrier at the Nd0.05Bi0.95FeO3/Nb:SrTiO3 interface.
引用
收藏
页数：5
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