Resistive switching in doped BiFeO3 films

被引：14
|
作者：
Wu, Lei [1 ]
Jiang, Changjun [1 ]
Xue, Desheng [1 ]
机构：
[1] Lanzhou Univ, Key Lab Magnetism & Magnet Mat MOE, Lanzhou 730000, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期
基金：
中国国家自然科学基金;
关键词：
MEMORY APPLICATIONS; SCHOTTKY JUNCTION; INTERFACES; MODULATION;
D O I：
10.1063/1.4865217
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polycrystalline Bi0.9Sr0.1FeO3 and Bi0.9Ca0.1Fe0.9Co0.1O3 films (BXFO) were synthesized by sol-gel spin coating method. Local resistive switching behavior was investigated. Bipolar resistive switching characteristics were clearly observed in both two samples. However, for the Bi0.9Sr0.1FeO3 film, the switching from the low resistance (LRS) to the high resistance (HRS) occurred at positive bias and the switching from the HRS to the LRS at negative bias. On the contrary, the resistance of Bi0.9Ca0.1Fe0.9Co0.1O3 film was switched from the LRS to the HRS when a negative bias was applied. Possible mechanisms for both resistive switching forms were discussed on the basis of the Schottky-like barrier. (C) 2014 AIP Publishing LLC.
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页数：3
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