Asymmetric Low Temperature Bonding Structure Using Ultra-thin Buffer Layer Technique for 3D Integration

被引：0
|
作者：
Liang, Hao-Wen [1 ]
Yu, Ting-Yang [1 ]
Chang, Yao-Jen [1 ]
Chen, Kuan-Neng [1 ]
机构：
[1] Natl Chia Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
PROCEEDINGS OF THE 2016 IEEE 23RD INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2016年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Wafer-level Sn/In-Cu bonding structure with Ni ultra-thin buffer layer is investigated to achieve a reduction in solder thickness, bonding temperature and duration. Furthermore, the asymmetric bonding structure is able to separate the manufacturing process of solder and electrical isolation layer. It is a promising approach for the application on hybrid bonding of three-dimensional integration.
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页码：312 / 315
页数：4
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