Further considerations on the high-cycle fatigue of micron-scale polycrystalline silicon

被引：34

作者：

Alsem, D. H. ^{[2
,3
]}

Muhlstein, C. L. ^{[4
]}

Stach, E. A. ^{[5
]}

Ritchie, R. O. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA

[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[5] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA

来源：

SCRIPTA MATERIALIA | 2008年 / 59卷 / 09期

关键词：

MEMS; Silicon; Fatigue; Reaction-layer fatigue;

D O I：

10.1016/j.scriptamat.2008.03.043

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bulk silicon is not susceptible to high-cycle fatigue but micron-scale silicon films are. Using polysilicon resonators to determine stress-lifetime fatigue behavior in several environments, oxide layers are found to show up to four-fold thickening after cycling, which is not seen after monotonic loading or after cycling in vacuo. We believe that the mechanism of thin-film silicon fatigue is "reaction-layer fatigue", involving cyclic stress-induced thickening of the oxide and moisture-assisted cracking within this layer. Published by Elsevier Ltd. on behalf of Acta Materialia Inc.

引用

页码：931 / 935

页数：5

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