Further considerations on the high-cycle fatigue of micron-scale polycrystalline silicon

被引：34
|
作者：
Alsem, D. H. [2 ,3 ]
Muhlstein, C. L. [4 ]
Stach, E. A. [5 ]
Ritchie, R. O. [1 ,2 ]
机构：
[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
[4] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[5] Purdue Univ, Sch Mat Engn, W Lafayette, IN 47907 USA
来源：
SCRIPTA MATERIALIA | 2008年 / 59卷 / 09期
关键词：
MEMS; Silicon; Fatigue; Reaction-layer fatigue;
D O I：
10.1016/j.scriptamat.2008.03.043
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Bulk silicon is not susceptible to high-cycle fatigue but micron-scale silicon films are. Using polysilicon resonators to determine stress-lifetime fatigue behavior in several environments, oxide layers are found to show up to four-fold thickening after cycling, which is not seen after monotonic loading or after cycling in vacuo. We believe that the mechanism of thin-film silicon fatigue is "reaction-layer fatigue", involving cyclic stress-induced thickening of the oxide and moisture-assisted cracking within this layer. Published by Elsevier Ltd. on behalf of Acta Materialia Inc.
引用
收藏
页码：931 / 935
页数：5
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