Anisotropy of the quantum-confined Stark effect in a single InAs quantum dot

被引：2
|
作者：
Ohmori, M [1 ]
Torii, K [1 ]
Sakaki, H [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期
关键词：
D O I：
10.1002/pssc.200564171
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The quantum-confined Stark effect in a single InAs quantum dot has been studied in a novel device geometry, where both in-plane and perpendicular electric fields, E-parallel to and E-perpendicular to, can be applied. The shift in the photoluminescence energy from the exciton ground state of the dot has been studied as functions of applied bias voltages, V-parallel to and V-perpendicular to, and found to be quite anisotropic. Possible origins of the observed anisotropy are discussed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：512 / +
页数：2
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