Anisotropy of the quantum-confined Stark effect in a single InAs quantum dot

被引：2
|
作者：
Ohmori, M [1 ]
Torii, K [1 ]
Sakaki, H [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期
关键词：
D O I：
10.1002/pssc.200564171
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The quantum-confined Stark effect in a single InAs quantum dot has been studied in a novel device geometry, where both in-plane and perpendicular electric fields, E-parallel to and E-perpendicular to, can be applied. The shift in the photoluminescence energy from the exciton ground state of the dot has been studied as functions of applied bias voltages, V-parallel to and V-perpendicular to, and found to be quite anisotropic. Possible origins of the observed anisotropy are discussed. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：512 / +
页数：2
相关论文
共 50 条
  • [21] Quantum-confined stark effect in stepped-potential quantum wells
    Morita, Masahiko
    Goto, Katsuyuki
    Suzuki, Takeo
    1663, (29):
  • [22] THE QUANTUM-CONFINED STARK-EFFECT IN SHALLOW QUANTUM-WELLS
    GIBB, K
    LACELLE, C
    SUN, Q
    FORTIN, E
    ROTH, AP
    CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) : 447 - 450
  • [23] Inverse parabolic quantum well and its quantum-confined Stark effect
    1600, American Inst of Physics, Woodbury, NY, USA (74):
  • [24] The influence of the quantum-confined Stark effect on InGaN/AlGaN quantum dots
    Zakizade, E.
    Figge, S.
    Laurus, C.
    Mehrtens, T.
    Rosenauer, A.
    Hommel, D.
    Gutowski, J.
    Sebald, K.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2017, 254 (05):
  • [25] Quantum-Confined Stark Effect in Ensemble of Colloidal Semiconductor Quantum Dots
    Wang Zhi-Bing
    Zhang Hui-Chao
    Zhang Jia-Yu
    Su, Huaipeng
    Wang, Y. Andrew
    CHINESE PHYSICS LETTERS, 2010, 27 (12)
  • [26] Quantum-confined stark effect and polarization field in single quantum well InGaN/GaN LEDs
    Kaplar, R. J.
    Kurtz, S. R.
    Koleske, D. D.
    GaN, AIN, InN and Related Materials, 2006, 892 : 813 - 823
  • [27] QUANTUM-CONFINED STARK EFFECTS IN SEMICONDUCTOR QUANTUM DOTS
    WEN, GW
    LIN, JY
    JIANG, HX
    CHEN, Z
    PHYSICAL REVIEW B, 1995, 52 (08): : 5913 - 5922
  • [28] Quantum-confined Stark effects on optical transitions of InAs self-assembled quantum dots
    Hsu, TM
    Chang, WH
    Huang, CC
    Yeh, NT
    Chyi, JI
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1329 - 1330
  • [29] Quantum-confined stark effects in semiconductor quantum disks
    Susa, N
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (10) : 1760 - 1766
  • [30] Spectroscopy of persistent hole burning in the quantum dot-matrix system: Quantum-confined stark effect and electroabsorption
    S. Yu. Kruchinin
    A. V. Fedorov
    Physics of the Solid State, 2007, 49 : 968 - 975
12345