A Scalable HCI Reliability model for 40nm nMOSFET

被引：0
|
作者：
Zhang, Mengdi [1 ]
Li, Xi [1 ]
Wang, Mingjuan [1 ]
Shi, Yanling [1 ]
Ren, Zheng
Hu, Shaojian
机构：
[1] E China Normal Univ, Dept EE, Shanghai 200241, Peoples R China
来源：
ELECTRONIC INFORMATION AND ELECTRICAL ENGINEERING | 2012年 / 19卷
关键词：
hot carrier injection; reliability modeling; MOSRA; PSP model;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
This paper introduces a scalable PSP model for hot carrier injection (HCI) in 40nm MOSFET. With proposed model parameters, MOSRA model can simulate devices of different channel size very well. Modeled electrical characteristics, including I-V curve, I-dlin, I-sat and V-thlin depending on stress time, show good consistency with measured performance. This proposed model provides an accurate and fast way for reliability modeling in deep sub-micron CMOS technology.
引用
收藏
页码：67 / 69
页数：3
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