A Scalable HCI Reliability model for 40nm nMOSFET

被引：0

作者：

Zhang, Mengdi ^{[1
]}

Li, Xi ^{[1
]}

Wang, Mingjuan ^{[1
]}

Shi, Yanling ^{[1
]}

Ren, Zheng

Hu, Shaojian

机构：

[1] E China Normal Univ, Dept EE, Shanghai 200241, Peoples R China

来源：

ELECTRONIC INFORMATION AND ELECTRICAL ENGINEERING | 2012年 / 19卷

关键词：

hot carrier injection; reliability modeling; MOSRA; PSP model;

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

This paper introduces a scalable PSP model for hot carrier injection (HCI) in 40nm MOSFET. With proposed model parameters, MOSRA model can simulate devices of different channel size very well. Modeled electrical characteristics, including I-V curve, I-dlin, I-sat and V-thlin depending on stress time, show good consistency with measured performance. This proposed model provides an accurate and fast way for reliability modeling in deep sub-micron CMOS technology.

引用

页码：67 / 69

页数：3

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