Performance Comparison of InAs, InSb, and GaSb n-Channel Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors in the Ballistic Transport Limit

被引：7

作者：

Shimoida, Kenta ^{[1
]}

Tsuchiya, Hideaki ^{[1
,2
]}

Kamakura, Yoshinari ^{[2
,3
]}

Mori, Nobuya ^{[2
,3
]}

Ogawa, Matsuto ^{[1
]}

机构：

[1] Kobe Univ, Grad Sch Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

[2] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020076, Japan

[3] Osaka Univ, Div Elect Elect & Informat Engn, Grad Sch Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 03期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

CARRIER-TRANSPORT;

D O I：

10.7567/APEX.6.034301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ballistic performances of InAs, InSb, and GaSb nanowire field-effect transistors (NWFETs) were theoretically investigated. We found that InAs and InSb NWFETs exhibit similar device performances due to 1D band structure effects. Furthermore, although these In-based NWFETs suffer from the density-of-states (DOS) bottleneck, a lower power switching is expected. On the other hand, GaSb NWs have multiple energy subbands at conduction band minima, as a result of the projection of L-valleys which thus improves the DOS. In particular, a (110)-oriented GaSb NW has an improved DOS and a high electron velocity simultaneously, and thus, it could be a strong competitor to In-based NWFETs. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

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