Report on 4H-SiC JTE Schottky diodes

被引：3
|
作者：
Chen, L
Guy, OJ
Doneddu, D
Batcup, SGJ
Wilks, SP
Mawby, PA
Bouchet, T
Torregrosa, F
机构：
[1] Univ Coll Swansea, Sch Engn, Swansea SA2 8PP, W Glam, Wales
[2] Attn Prod Serv, Ion Beam Serv, F-13790 Peynier, France
来源：
MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 2-4期
关键词：
D O I：
10.1016/j.microrel.2005.07.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4H-SiC Schottky diodes with and without Junction Terminate Extension (JTE) have been fabricated using Ni for contact and boron for p+ implant. Electrical characterization showed a rectifying behaviour in the on-state. In the reverse mode, the un-terminated Schottky diode demonstrated a breakdown voltage of approximately 200 V, while the JTE structure exhibited a significant improved breakdown performance, and the blocking voltage over 450 V. Optical microscope examination revealed the surface flashover failure located at the metal contact periphery for the un-terminated Schottky diode, while the JTE structure failed in the central area of the metal contact. Both the experimental and theoretical analyses confirmed the JTE structure enhancement on the reliability for SiC Schottky diode performance in reverse mode. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：637 / 640
页数：4
相关论文
共 50 条
  • [1] Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes
    Mahajan, A
    Skromme, BJ
    [J]. SOLID-STATE ELECTRONICS, 2005, 49 (06) : 945 - 955
  • [2] Planar Schottky microwave diodes on 4H-SiC
    Südow, M
    Rorsman, N
    Nilsson, PÅ
    Zirath, H
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 937 - 940
  • [3] Drift mobility in 4H-SiC Schottky diodes
    La Via, F
    Galvagno, G
    Roccaforte, F
    Ruggiero, A
    Calcagno, L
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (14) : 1 - 3
  • [4] 4H-SiC Trench Structure Schottky Diodes
    Aketa, Masatoshi
    Yokotsuji, Yuta
    Miura, Mineo
    Nakamura, Takashi
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 933 - 936
  • [5] Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes
    Chen, G.
    Li, Z. Y.
    Bai, S.
    Han, P.
    [J]. THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE, 2008, 6984
  • [6] Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes
    Ewing, D. J.
    Wahab, Q.
    Ciechonski, R. R.
    Syvajarvi, M.
    Yakimova, R.
    Porter, L. M.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (12) : 1287 - 1291
  • [7] Dynamic behavior of Ti/4H-SiC Schottky diodes
    Shili, K.
    Ben Karoui, M.
    Gharbi, R.
    Abdelkrim, M.
    Fathallah, M.
    Ferrero, S.
    [J]. 2012 16TH IEEE MEDITERRANEAN ELECTROTECHNICAL CONFERENCE (MELECON), 2012, : 626 - 629
  • [8] Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC
    Hamida, A. Ferhat
    Ouennoughi, Z.
    Sellai, A.
    Weiss, R.
    Ryssel, H.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (04)
  • [9] Characterisation of 4H-SiC Schottky diodes for IGBT applications
    Johnson, CM
    Rahimo, M
    Wright, NG
    Hinchley, DA
    Horsfall, AB
    Morrison, DJ
    Knights, A
    [J]. IAS 2000 - CONFERENCE RECORD OF THE 2000 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-5, 2000, : 2941 - 2947
  • [10] Performances of 4H-SiC Schottky diodes as neutron detectors
    Lo Gludice, Alessandro
    Fasolo, Floriana
    Durisi, Elisabetta
    Manfredotti, Claudio
    Vittone, Ettore
    Fizzotti, Franco
    Zanini, Alba
    Rosi, Giancarlo
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 583 (01): : 177 - 180
12345