Report on 4H-SiC JTE Schottky diodes

被引：3
|
作者：
Chen, L
Guy, OJ
Doneddu, D
Batcup, SGJ
Wilks, SP
Mawby, PA
Bouchet, T
Torregrosa, F
机构：
[1] Univ Coll Swansea, Sch Engn, Swansea SA2 8PP, W Glam, Wales
[2] Attn Prod Serv, Ion Beam Serv, F-13790 Peynier, France
来源：
MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 2-4期
关键词：
D O I：
10.1016/j.microrel.2005.07.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4H-SiC Schottky diodes with and without Junction Terminate Extension (JTE) have been fabricated using Ni for contact and boron for p+ implant. Electrical characterization showed a rectifying behaviour in the on-state. In the reverse mode, the un-terminated Schottky diode demonstrated a breakdown voltage of approximately 200 V, while the JTE structure exhibited a significant improved breakdown performance, and the blocking voltage over 450 V. Optical microscope examination revealed the surface flashover failure located at the metal contact periphery for the un-terminated Schottky diode, while the JTE structure failed in the central area of the metal contact. Both the experimental and theoretical analyses confirmed the JTE structure enhancement on the reliability for SiC Schottky diode performance in reverse mode. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：637 / 640
页数：4
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