Charged particle detection properties of epitaxial 4H-SiC Schottky diodes

被引：0

作者：

Nava, F. ^{[1
]}

Vanni, P. ^{[1
]}

Verzellesi, G. ^{[2
]}

Castaldini, A. ^{[3
]}

Cavallini, A. ^{[3
]}

Polenta, L. ^{[3
]}

Nipoti, R. ^{[4
]}

Donolato, C. ^{[4
]}

机构：

[1] INFN, Physics Department, Univ. of Modena and Reggio Emilia, via Campi 213/A, IT-41100 Modena, Italy

[2] INFM, DSI, Univ. of Modena and Reggio Emilia, via Campi 213/B, IT-41100 Modena, Italy

[3] INFM, Physics Department, University of Bologna, v. le Berti Pichat 6/2, IT-40100 Bologna, Italy

[4] CNR-Istituto LAMEL, via Gobetti 101, IT-40129 Bologna, Italy

来源：

| 2001年 / Trans Tech Publ, Uetikon-Zuerich卷 / 353-356期

关键词：

Charged particles - Crystal orientation - Crystalline materials - Radiation detectors - Schottky barrier diodes - Silicon wafers - Surface structure;

D O I：

10.4028/www.scientific.net/msf.353-356.757

中图分类号：

学科分类号：

摘要：

This work presents measurements of the charge-collection properties of 4H-SiC Schottky diodes under alpha radiation and investigates the influence of native and alpha induced defects on the detector performance. The contribution of the diffusion of minority carriers to the charge collection efficiency is pointed out. Values of 500 ns and 95 μs are inferred for the hole and electron lifetime, respectively.

引用

共 50 条

[1] Charged particle detection properties of epitaxial 4H-SiC Schottky diodes
Nava, F
Vanni, P
Verzellesi, G
Castaldini, A
Cavallini, A
Polenta, L
Nipoti, R
Donolato, C
[J]. SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 757 - 761
[2] Properties of homoepitaxial 4H-SiC and characteristics of Ti/4H-SiC Schottky barrier diodes
Chen, G.
Li, Z. Y.
Bai, S.
Han, P.
[J]. THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE, 2008, 6984
[3] Electrical Properties of Detector Schottky Diodes Based on 4H-SiC High Quality Epitaxial Layer
Zat'ko, Bohumir
Hrubcin, Ladislav
Bohacek, Pavol
Osvald, Jozef
Sagatova, Andrea
Sekacova, Maria
Kovacova, Eva
Necas, Vladimir
[J]. APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019), 2019, 2131
[4] Effect of defects on electrical properties of 4H-SiC Schottky diodes
Ben Karoui, M.
Gharbi, R.
Alzaied, N.
Fathallah, M.
Tresso, E.
Scaltrito, L.
Ferrero, S.
[J]. MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2008, 28 (5-6): : 799 - 804
[5] Defect influence on the electrical properties of 4H-SiC Schottky diodes
Scaltrito, L
Celasco, E
Porro, S
Ferrero, S
Giorgis, F
Pirri, CF
Perrone, D
Meotto, U
Mandracci, P
Richieri, G
Merlin, L
Cavallini, A
Castaldini, A
Rossi, M
[J]. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1081 - 1084
[6] Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes
Sciortino, S
Hartjes, F
Lagomarsino, S
Nava, F
Brianzi, M
Cindro, V
Lanzieri, C
Moll, M
Vanni, P
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 552 (1-2): : 138 - 145
[7] Recent results on particle detection with epitaxial SiC Schottky diodes
Bruzzi, M
Hartjes, F
Lagomarsino, S
Nava, F
Sciortino, S
Vanni, P
[J]. 2002 IEEE NUCLEAR SCIENCE SYMPOSIUM, CONFERENCE RECORD, VOLS 1-3, 2003, : 14 - 17
[8] Report on 4H-SiC JTE Schottky diodes
Chen, L
Guy, OJ
Doneddu, D
Batcup, SGJ
Wilks, SP
Mawby, PA
Bouchet, T
Torregrosa, F
[J]. MICROELECTRONICS RELIABILITY, 2006, 46 (2-4) : 637 - 640
[9] Planar Schottky microwave diodes on 4H-SiC
Südow, M
Rorsman, N
Nilsson, PÅ
Zirath, H
[J]. SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 937 - 940
[10] 4H-SiC Trench Structure Schottky Diodes
Aketa, Masatoshi
Yokotsuji, Yuta
Miura, Mineo
Nakamura, Takashi
[J]. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 933 - 936

← 1 2 3 4 5 →