Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices

被引:20
|
作者
Schiavon, Dario [1 ,2 ]
Binder, Michael [1 ,3 ]
Loeffler, Andreas [1 ]
Peter, Matthias [1 ]
机构
[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany
[2] Univ Ulm, Inst Optoelekt, D-89081 Ulm, Germany
[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
关键词
Light emitting diodes - Quantum chemistry - Quantum efficiency - Semiconductor quantum wells;
D O I
10.1063/1.4796117
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on a green light-emitting device, in which the light of an efficient blue 1 mm(2) GaInN/GaN light-emitting diode (LED) is converted into green light by an optically pumped GaInN/GaN multiple quantum well structure. This solution reached an efficacy of 127 lm/W, i.e., higher than that of state-of-the-art 1 mm(2) GaInN/GaN LEDs emitting directly at the target wavelength, at 350 mA current and 535 nm peak wavelength. Optically pumped converters overcome the design limitations of typical multiple quantum well LEDs, where carrier transport issues limit the maximum number of functioning wells and might help to solve the problem of the green gap. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4796117]
引用
收藏
页数:4
相关论文
共 50 条
  • [31] High-quality GaInN/GaN multiple quantum wells
    Koike, M
    Yamasaki, S
    Nagai, S
    Koide, N
    Asami, S
    Amano, H
    Akasaki, I
    APPLIED PHYSICS LETTERS, 1996, 68 (10) : 1403 - 1405
  • [32] Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes
    Tsai, Sheng-Chieh
    Lu, Cheng-Hsueh
    Liu, Chuan-Pu
    NANO ENERGY, 2016, 28 : 373 - 379
  • [33] Photon modulated electroluminescence of GaInN/GaN multiple quantum well light emitting diodes
    Li, Y.
    Senawiratne, J.
    Xia, Y.
    Zhao, W.
    Zhu, M.
    Detchprohm, T.
    Wetzel, C.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 2293 - +
  • [34] Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes
    Zhou, Q.
    Xu, M.
    Wang, H.
    OPTO-ELECTRONICS REVIEW, 2016, 24 (01) : 1 - 9
  • [35] Ultrafast Terahertz Nanoseismology of GaInN/GaN Multiple Quantum Wells
    Mannan, Abdul
    Bagsican, Filchito Renee G.
    Yamahara, Kota
    Kawayama, Iwao
    Murakami, Hironaru
    Bremers, Heiko
    Rossow, Uwe
    Hangleiter, Andreas
    Turchinovich, Dmitry
    Tonouchi, Masayoshi
    ADVANCED OPTICAL MATERIALS, 2021, 9 (15)
  • [36] Junction temperature measurements and thermal modeling of GaInN/GaN quantum well light-emitting diodes
    Senawiratne, J.
    Li, Y.
    Zhu, M.
    Xia, Y.
    Zhao, W.
    Detchprohm, T.
    Chatterjee, A.
    Plawsky, J. L.
    Wetzel, C.
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (05) : 607 - 610
  • [37] Radiative and nonradiative recombination times in optically excited GaInN/GaN quantum wells
    Netzel, C
    Doloca, R
    Lahmann, S
    Rossow, U
    Hangleiter, A
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 324 - 328
  • [38] Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes
    J. Senawiratne
    Y. Li
    M. Zhu
    Y. Xia
    W. Zhao
    T. Detchprohm
    A. Chatterjee
    J.L. Plawsky
    C. Wetzel
    Journal of Electronic Materials, 2008, 37 : 607 - 610
  • [39] Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices
    C. Wetzel
    T. Detchprohm
    T. Takeuchi
    H. Amano
    I. Akasaki
    Journal of Electronic Materials, 2000, 29 : 252 - 255
  • [40] High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers
    Wu, Ya-Fen
    ADVANCES IN CONDENSED MATTER PHYSICS, 2012, 2012