Optically pumped GaInN/GaN multiple quantum wells for the realization of efficient green light-emitting devices

被引:20
|
作者
Schiavon, Dario [1 ,2 ]
Binder, Michael [1 ,3 ]
Loeffler, Andreas [1 ]
Peter, Matthias [1 ]
机构
[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany
[2] Univ Ulm, Inst Optoelekt, D-89081 Ulm, Germany
[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
关键词
Light emitting diodes - Quantum chemistry - Quantum efficiency - Semiconductor quantum wells;
D O I
10.1063/1.4796117
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on a green light-emitting device, in which the light of an efficient blue 1 mm(2) GaInN/GaN light-emitting diode (LED) is converted into green light by an optically pumped GaInN/GaN multiple quantum well structure. This solution reached an efficacy of 127 lm/W, i.e., higher than that of state-of-the-art 1 mm(2) GaInN/GaN LEDs emitting directly at the target wavelength, at 350 mA current and 535 nm peak wavelength. Optically pumped converters overcome the design limitations of typical multiple quantum well LEDs, where carrier transport issues limit the maximum number of functioning wells and might help to solve the problem of the green gap. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4796117]
引用
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页数:4
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