Implanted p-n junctions in GaN

被引：16
|
作者：
Cao, XA
LaRoche, JR
Ren, F [1 ]
Pearton, SJ
Lothian, JR
Singh, RK
Wilson, RG
Guo, HJ
Pennycook, SJ
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Multiplex Inc, S Plainfield, NJ 07080 USA
[4] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 07期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S0038-1101(99)00012-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Si-29(+) ion implantation into GaN(Mg), followed by rapid thermal annealing at 1100 degrees C was used to create n(+)/p junctions. The junction ideality factor was similar to 2, indicative of a high density of generation-recombination centers, and the breakdown voltage was 13 V at 5.1 x 10(-4) A cm(-2) Transmission electron microscopy revealed a high density (> 10(10) cm(-2)) of implantation damage-related dislocations in the material, due to incomplete annealing of displaced lattice atoms. Higher annealing temperatures and improved junction passivation are needed for improved stand-off voltages. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1235 / 1238
页数：4
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