Implanted p-n junctions in GaN

Si-29(+) ion implantation into GaN(Mg), followed by rapid thermal annealing at 1100 degrees C was used to create n(+)/p junctions. The junction ideality factor was similar to 2, indicative of a high density of generation-recombination centers, and the breakdown voltage was 13 V at 5.1 x 10(-4) A cm(-2) Transmission electron microscopy revealed a high density (> 10(10) cm(-2)) of implantation damage-related dislocations in the material, due to incomplete annealing of displaced lattice atoms. Higher annealing temperatures and improved junction passivation are needed for improved stand-off voltages. (C) 1999 Elsevier Science Ltd. All rights reserved.