A Circuit-Architecture Co-optimization Framework for Exploring Nonvolatile Memory Hierarchies

被引:3
|
作者
Dong, Xiangyu [1 ]
Jouppi, Norman P. [2 ]
Xie, Yuan [3 ]
机构
[1] Qualcomm Technol Inc, San Diego, CA 92121 USA
[2] Hewlett Packard Labs, Mississauga, ON, Canada
[3] Penn State Univ, University Pk, PA 16802 USA
关键词
SRAM; DRAM; ReRAM; STTRAM; PCRAM; DESIGN SPACE EXPLORATION; PHASE-CHANGE MEMORY; PERFORMANCE;
D O I
10.1145/2541228.2541230
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Many new memory technologies are available for building future energy-efficient memory hierarchies. It is necessary to have a framework that can quickly find the optimal memory technology at each hierarchy level. In this work, we first build a circuit-architecture joint design space exploration framework by combining RC circuit analysis and Artificial Neural Network (ANN)-based performance modeling. Then, we use this framework to evaluate some emerging nonvolatile memory hierarchies. We demonstrate that a Resistive RAM (ReRAM)-based cache hierarchy on an 8-core Chip-Multiprocessor (CMP) system can achieve a 24% Energy Delay Product (EDP) improvement and a 36% Energy Delay Area Product (EDAP) improvement compared to a conventional hierarchy with SRAM on-chip caches and DRAM main memory.
引用
收藏
页数:22
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