Analog/RF Wonderland: Circuit and Technology Co-optimization in Advanced FinFET Technology

被引：0

作者：

Hsueh, Fu-Lung ^{[1
]}

Peng, Yung-Chow ^{[1
]}

Chen, Chung-Hui ^{[1
]}

Yeh, Tzu-Jin ^{[1
]}

Hsieh, Hsieh-Hung ^{[1
]}

Chang, Chin-Ho ^{[1
]}

Liu, Szu-Lin ^{[1
]}

Chuang, Mei-Chen ^{[1
]}

Chen, Mark ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Hsinchu, Taiwan

来源：

2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY | 2016年

关键词：

LNA; VCO; ADPLL; bandgap; NTV; DGE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stacked-gate is one of the most popular solutions used in mismatch-sensitive circuits in FinFET technology. A Bandgap circuit using stacked-gate formed by 150 short-channel devices to achieve high accuracy is demonstrated. Adding uniform surrounding patterns to the target MOS array, the device mismatch caused by DGE (density gradient effect) can be cancelled. In low-power RF LNA and VCO, dc power reductions are achieved. The near-threshold-voltage (NTV) design technique is adopted for further 50% RF power reduction.

引用

页数：2

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