Full band Monte Carlo investigation of electron transport in strained Si grown on Si1-xGex substrates

被引：31
|
作者：
Bufler, FM
Graf, P
Keith, S
Meinerzhagen, B
机构：
[1] Inst. F. Theor. Elektrotech. M., Universität Bremen
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 16期
关键词：
D O I：
10.1063/1.119259
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In-plane drift velocities determined by full band Monte Carlo simulations and drift mobility calculations are reported for electrons in strained Si grown on Si1-xGex substrates up to x=0.4 at 77 and 300 K. Drift mobilities of 28200 cm(2)/(V s) at 77 K and 2230 cm(2)/(V s) at 300 K are found for x=0.3. Strain enhances the drift velocity significantly only below electric fields of about 50 kV/cm. At 77 K the Gunn effect is predicted to occur above 15 kV/cm. (C) 1997 American Institute of Physics.
引用
收藏
页码：2144 / 2146
页数：3
相关论文
共 50 条
  • [1] Full band Monte Carlo investigation of electron transport in strained Si grown on Si1-xGex substrates (vol 70, pg 2144, 1997)
    Bufler, FM
    Graf, P
    Keith, S
    Meinerzhagen, B
    APPLIED PHYSICS LETTERS, 1997, 71 (23) : 3447 - 3447
  • [2] Erratum: 'full band Monte Carlo investigation of electron transport in strained Si grown on Si1-xGex substrates' [Appl. Phys. Lett. 70, 2144 (1997)]
    Bufler, F.M.
    Graf, P.
    Keith, S.
    Meinerzhagen, B.
    Applied Physics Letters, 1997, 71 (23):
  • [3] ELECTRON-TRANSPORT IN STRAINED SI LAYERS ON SI1-XGEX SUBSTRATES
    VOGELSANG, T
    HOFMANN, KR
    APPLIED PHYSICS LETTERS, 1993, 63 (02) : 186 - 188
  • [4] MONTE-CARLO SIMULATION OF HOLE TRANSPORT IN STRAINED SI1-XGEX
    YAMADA, T
    FERRY, DK
    SOLID-STATE ELECTRONICS, 1995, 38 (04) : 881 - 890
  • [5] ELECTRON-TRANSPORT PROPERTIES OF A STRAINED SI LAYER ON A RELAXED SI1-XGEX SUBSTRATE BY MONTE-CARLO SIMULATION
    MIYATA, H
    YAMADA, T
    FERRY, DK
    APPLIED PHYSICS LETTERS, 1993, 62 (21) : 2661 - 2663
  • [6] Hole transport in strained Si1-xGex alloys on Si1-yGey substrates
    Bufler, FM
    Meinerzhagen, B
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) : 5597 - 5602
  • [7] Hole transport in strained Si1-xGex alloys on Si1-yGey substrates
    J Appl Phys, 10 (5597):
  • [8] Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si1-xGex heterostructures
    Gamiz, F.
    Roldan, J.B.
    Lopez-Villanueva, J.A.
    VLSI Design, 1998, 8 (1-4): : 253 - 256
  • [9] Electron effective mobility in strained-Si/Si1-xGex MOS devices using Monte Carlo simulation
    Aubry-Fortuna, V
    Dollfus, P
    Galdin-Retailleau, S
    SOLID-STATE ELECTRONICS, 2005, 49 (08) : 1320 - 1329
  • [10] Band structure investigation of strained Si1-xGex/Si coupled quantum wells
    Lu, F.
    Fan, W. J.
    Dang, Y. X.
    Zhang, D. H.
    Yoon, S. F.
    Wang, R.
    INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2007, 4 (04) : 431 - 440
12345