Band structure investigation of strained Si1-xGex/Si coupled quantum wells

被引：0
|
作者：
Lu, F. [1 ]
Fan, W. J. [1 ]
Dang, Y. X. [1 ]
Zhang, D. H. [1 ]
Yoon, S. F. [1 ]
Wang, R. [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY | 2007年 / 4卷 / 04期
关键词：
band structure; coupled quantum well; 8-band k center dot p method; strain effect; valence band; hole subband energy; coupling effect;
D O I：
10.1504/IJNT.2007.013977
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The band structure of Si1-xGex/Si coupled quantum wells (CQW) was calculated with the 8-band k - p method. Both strain and spin-orbit split-off band effect were taken into account. The subband energy of the Si0.6Ge0.4/Si quantum well as a function of barrier width and well width was calculated. Barrier width varies between 20-60 angstrom while well width varies between 30-110 angstrom. Finally, the relationship between subband energy and Ge composition range from 10% to 60% was also shown.
引用
收藏
页码：431 / 440
页数：10
相关论文
共 50 条
  • [1] Intersubband transitions in strained Si/Si1-xGex/Si quantum wells
    Hionis, G
    Tsetseri, M
    Zora, A
    Triberis, GP
    SUPERLATTICES AND MICROSTRUCTURES, 2000, 28 (02) : 151 - 156
  • [2] Optoelectronic aspects of strained Si1-xGex/Si quantum wells
    Univ of Tokyo, Tokyo, Japan
    J Mater Sci Mater Electron, 5 (341-349):
  • [3] Band structure of strained Si/(111)Si1-xGex:: a first principles investigation
    Song Jian-Jun
    Zhang He-Ming
    Dai Xian-Ying
    Hu Hui-Yong
    Xuan Rong-Xi
    ACTA PHYSICA SINICA, 2008, 57 (09) : 5918 - 5922
  • [4] Band structure of strained Si/(111)Si1-xGex: A first principles investigation
    Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
    Wuli Xuebao, 2008, 9 (5918-5922):
  • [5] LUMINESCENCE OF STRAINED SI1-XGEX/SI QUANTUM-WELLS AND MICROSTRUCTURES
    FUKATSU, S
    SHIRAKI, Y
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1025 - 1032
  • [6] OPTOELECTRONIC ASPECTS OF STRAINED SI1-XGEX/SI QUANTUM-WELLS
    FUKATSU, S
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1995, 6 (05) : 341 - 349
  • [7] Near band-edge photoluminescence in strained and relaxed Si1-xGex/Si quantum wells
    Yang, Y
    Jiang, SJ
    Tian, ZH
    Wu, XH
    Sheng, C
    Wang, X
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A): : 1884 - 1888
  • [8] Near band-edge photoluminescence in strained and relaxed Si1-xGex/Si quantum wells
    Yunnan Univ, Kuming, China
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (4 A): : 1884 - 1888
  • [9] Valence band structure of strained Si/(111)Si1-xGex
    Song JianJun
    Zhang HeMing
    Hu HuiYong
    Dai XianYing
    Xuan RongXi
    SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 53 (03) : 454 - 457
  • [10] Valence band structure of strained Si/(111)Si1-xGex
    SONG JianJun
    Science China(Physics,Mechanics & Astronomy), 2010, Mechanics & Astronomy)2010 (03) : 454 - 457
12345